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Article Dans Une Revue Journal de Physique III Année : 1997

Swift Heavy Ion Induced Defect Study in Epitaxial n-Type CaAs from ${\it In}$ ${\it Situ}$ Hall Effect Measurements

M. Mikou
  • Fonction : Auteur
Régis Carin
P. Bogdanski
  • Fonction : Auteur
P. Marie

Résumé

N-type (Si-doped, ND ≈1017 cm-3) GaAs epitaxial layers (MOCVD) are irradiated at 77 K with oxygen (0.163 GeV), krypton (5.15 GeV), xenon (5.73 GeV) and at 300 K with krypton (5.15 GeV). Hall effect measurements are performed, in situ, with increasing fluence. A decrease of the electron concentration and a degradation of the Hall mobility, respectively due to trapping and to scattering on irradiation-induced point defects are pointed out. In the heavily doped layers, shallow donor impurities merge with the conduction band in distorted band tail. A simple two band conduction model is used as a simulation tool, which allows the carrier Hall concentration variation to be correctly fitted, as a function of both temperature and ion fluence. The Hall mobility versus fluence variation at 77 K, which is mainly limited by screened ionized impurities and defects, is also simulated. From these simulations, the arsenic vacancy levels E1 and E2 are most likely to correspond respectively to single acceptor (-/0) and single donor (0/+) transitions. The introduction rates of induced defects (in particular VAs) are estimated: the total experimental introduction rate appears to be about 50% of the theoretical atomic displacement rate associated with nuclear collisions, independently of ion nature and of temperature. Although electronic stopping power Se is about 2000 times larger than nuclear stopping power Sn, it is then suggested that irradiation-induced electronic excitation, in the investigated range Se = 1–12 MeV/μm, has no effect on the degradation of n-type GaAs epitaxial layers.

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jpa-00249672 , version 1 (04-02-2008)

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M. Mikou, Régis Carin, P. Bogdanski, P. Marie. Swift Heavy Ion Induced Defect Study in Epitaxial n-Type CaAs from ${\it In}$ ${\it Situ}$ Hall Effect Measurements. Journal de Physique III, 1997, 7 (8), pp.1661-1676. ⟨10.1051/jp3:1997216⟩. ⟨jpa-00249672⟩

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