Study of the Electron Mean Free Path by Ballistic Electron Emission Microscopy
Résumé
Ballistic Electron Emission Microscopy allows buried interfaces to be characterized with a subnanometer resolution. Additionnally, the electron mean free path in a thin metal layer can thus be investigated with a good level of accuracy. This paper presents the latest results in this field for an Au/n-Si Schottky diode. A discussion is also proposed to link these results with the still controversial interpretations of BEEM contrasts.
Domaines
Articles anciens
Origine : Accord explicite pour ce dépôt