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Article Dans Une Revue Journal de Physique III Année : 1993

Influence of dislocations on dark current of multicrystalline silicon N+ P junction

H. El Ghitani
  • Fonction : Auteur
M. Pasquinelli

Résumé

A detailed characterization of the dark current in large grained polycristalline silicon cells is given. This current is greatly influenced by the presence of dislocations. A new model for the shunt current transmitted by these defects is given. It is found that this current is proportional to exp (qV/2 kT). The comparison between the three essential components of the dark current (diffusion, recombination and shunt component) indicates that the shunt component is the dominant one at low applied voltage (V < 300 mV ). Even at higher voltage (V >300 mV ) the shunt component is comparable to the diffusion one when the dislocation density is greater than 105 cm-2. The computed results are in agreement with experimental ones.

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Dates et versions

jpa-00249055 , version 1 (04-02-2008)

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H. El Ghitani, M. Pasquinelli. Influence of dislocations on dark current of multicrystalline silicon N+ P junction. Journal de Physique III, 1993, 3 (10), pp.1931-1939. ⟨10.1051/jp3:1993250⟩. ⟨jpa-00249055⟩

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