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Article Dans Une Revue Journal de Physique III Année : 1993

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

P. Dollfus
P. Hesto
  • Fonction : Auteur
S. Galdin
  • Fonction : Auteur
C. Brisset
  • Fonction : Auteur

Résumé

A theoretical study of 50 nm-Single and Dual-Gate MODFETs using Monte Carlo simulation is reported. The introduction of a second gate, whose potential is fixed to a positive value, between the control-gate and the drain allows to efficiently provide against short-channel effects that occur in ultra-short single-gate MODFET. We describe the physical operating of these devices and especially the role of the second gate. The dual-gate MODFET exhibits an excellent saturation behaviour compared with single-gate MODFETs together with high values of transconductance gm and current gain cutoff frequency fT. This is resulting in a large improvement in the gm to gD, ratio.

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jpa-00249033 , version 1 (04-02-2008)

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P. Dollfus, P. Hesto, S. Galdin, C. Brisset. Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects. Journal de Physique III, 1993, 3 (9), pp.1719-1728. ⟨10.1051/jp3:1993232⟩. ⟨jpa-00249033⟩

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