Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects
Résumé
A theoretical study of 50 nm-Single and Dual-Gate MODFETs using Monte Carlo simulation is reported. The introduction of a second gate, whose potential is fixed to a positive value, between the control-gate and the drain allows to efficiently provide against short-channel effects that occur in ultra-short single-gate MODFET. We describe the physical operating of these devices and especially the role of the second gate. The dual-gate MODFET exhibits an excellent saturation behaviour compared with single-gate MODFETs together with high values of transconductance gm and current gain cutoff frequency fT. This is resulting in a large improvement in the gm to gD, ratio.
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