Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15
Résumé
Concentration and mobility of carriers in Hg1-xZnxTe for x near 0.15 are presented for as grown T.H.M. material and after annealings under mercury pressure. These concentrations and mobilities are near those found in Hg1-xCdxTe for a same band gap (x = 0.22 ). However the mercury diffusion coefficient is lower, this involves difficulty to obtain homogeneous n-type samples through low temperature stoichiometric annealing but reveales a better stability of the material. Indium is a donor dopant but with also a low diffusion coefficient ; moreover this doping strongly decreases the electron mobility. Carrier mobility and intrinsic concentration can be well described with a Kane model for the conduction band. This model leads to an estimation for the heavy hole effective mass of 0.6 m0.
Mots clés
- Kane model
- carrier density
- THM
- annealings
- band gap
- diffusion coefficient
- stability
- doping
- electron mobility
- conduction band
- heavy hole effective mass
- Hg sub 1 x Zn sub x Te:In
- Hg sub 1 x Zn sub x Te
- carrier mobility
- semiconductor
- zinc compounds
- semiconductor doping
- self diffusion in solids
- mercury compounds
- indium
- II VI semiconductors
- effective mass band structure
- diffusion in solids
- annealing
Domaines
| Origine | Accord explicite pour ce dépôt |
|---|---|
| Licence |