Article Dans Une Revue Revue de Physique Appliquée Année : 1989

Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15

S. Rolland
  • Fonction : Auteur
A. Lasbley
  • Fonction : Auteur
A. Seyni
  • Fonction : Auteur
R. Granger
  • Fonction : Auteur
R. Triboulet
  • Fonction : Auteur

Résumé

Concentration and mobility of carriers in Hg1-xZnxTe for x near 0.15 are presented for as grown T.H.M. material and after annealings under mercury pressure. These concentrations and mobilities are near those found in Hg1-xCdxTe for a same band gap (x = 0.22 ). However the mercury diffusion coefficient is lower, this involves difficulty to obtain homogeneous n-type samples through low temperature stoichiometric annealing but reveales a better stability of the material. Indium is a donor dopant but with also a low diffusion coefficient ; moreover this doping strongly decreases the electron mobility. Carrier mobility and intrinsic concentration can be well described with a Kane model for the conduction band. This model leads to an estimation for the heavy hole effective mass of 0.6 m0.

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jpa-00246102 , version 1 (04-02-2008)

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S. Rolland, A. Lasbley, A. Seyni, R. Granger, R. Triboulet. Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15. Revue de Physique Appliquée, 1989, 24 (8), pp.795-802. ⟨10.1051/rphysap:01989002408079500⟩. ⟨jpa-00246102⟩

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