<?xml version="1.0" encoding="utf-8"?>
<TEI xmlns="http://www.tei-c.org/ns/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:hal="http://hal.archives-ouvertes.fr/" xmlns:gml="http://www.opengis.net/gml/3.3/" xmlns:gmlce="http://www.opengis.net/gml/3.3/ce" version="1.1" xsi:schemaLocation="http://www.tei-c.org/ns/1.0 http://api.archives-ouvertes.fr/documents/aofr-sword.xsd">
  <teiHeader>
    <fileDesc>
      <titleStmt>
        <title>HAL TEI export of jpa-00245655</title>
      </titleStmt>
      <publicationStmt>
        <distributor>CCSD</distributor>
        <availability status="restricted">
          <licence target="https://creativecommons.org/publicdomain/zero/1.0/">CC0 1.0 - Universal</licence>
        </availability>
        <date when="2026-05-02T21:48:43+02:00"/>
      </publicationStmt>
      <sourceDesc>
        <p part="N">HAL API Platform</p>
      </sourceDesc>
    </fileDesc>
  </teiHeader>
  <text>
    <body>
      <listBibl>
        <biblFull>
          <titleStmt>
            <title xml:lang="en">Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics</title>
            <author role="aut">
              <persName>
                <forename type="first">A.</forename>
                <surname>George</surname>
              </persName>
              <idno type="halauthorid">224910-0</idno>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">J.</forename>
                <surname>Rabier</surname>
              </persName>
              <email type="md5">da06d16c699e266f9ccecb3437e320e6</email>
              <email type="domain">univ-poitiers.fr</email>
              <idno type="idhal" notation="numeric">877594</idno>
              <idno type="halauthorid" notation="string">257474-877594</idno>
              <idno type="ORCID">https://orcid.org/0000-0001-8218-981X</idno>
            </author>
            <editor role="depositor">
              <persName>
                <forename>Archives</forename>
                <surname>Journal de Physique</surname>
              </persName>
              <email type="md5">4e9320d7fed5cd40c966042bd1781da4</email>
              <email type="domain">ccsd.cnrs.fr</email>
            </editor>
          </titleStmt>
          <editionStmt>
            <edition n="v1" type="current">
              <date type="whenSubmitted">2008-02-04 08:00:00</date>
              <date type="whenWritten">1987</date>
              <date type="whenModified">2025-04-10 10:00:54</date>
              <date type="whenReleased">2008-02-04 08:00:00</date>
              <date type="whenProduced">1987</date>
              <date type="whenEndEmbargoed">1987-01-01</date>
              <ref type="file" target="https://hal.science/jpa-00245655v1/document">
                <date notBefore="1987-01-01"/>
              </ref>
              <ref type="file" subtype="publisherAgreement" n="1" target="https://hal.science/jpa-00245655v1/file/ajp-rphysap_1987_22_9_941_0.pdf" id="file-245655-190072">
                <date notBefore="1987-01-01"/>
              </ref>
              <ref type="externalLink" target="https://api.istex.fr/document/A704EEFF9C577CE21A30A492E411B275EBA837B4/fulltext/pdf?sid=hal"/>
            </edition>
            <respStmt>
              <resp>contributor</resp>
              <name key="122646">
                <persName>
                  <forename>Archives</forename>
                  <surname>Journal de Physique</surname>
                </persName>
                <email type="md5">4e9320d7fed5cd40c966042bd1781da4</email>
                <email type="domain">ccsd.cnrs.fr</email>
              </name>
            </respStmt>
          </editionStmt>
          <publicationStmt>
            <distributor>CCSD</distributor>
            <idno type="halId">jpa-00245655</idno>
            <idno type="halUri">https://hal.science/jpa-00245655</idno>
            <idno type="halBibtex">george:jpa-00245655</idno>
            <idno type="halRefHtml">&lt;i&gt;Revue de Physique Appliquée&lt;/i&gt;, 1987, 22 (9), pp.941-966. &lt;a target="_blank" href="https://dx.doi.org/10.1051/rphysap:01987002209094100"&gt;&amp;#x27E8;10.1051/rphysap:01987002209094100&amp;#x27E9;&lt;/a&gt;</idno>
            <idno type="halRef">Revue de Physique Appliquée, 1987, 22 (9), pp.941-966. &amp;#x27E8;10.1051/rphysap:01987002209094100&amp;#x27E9;</idno>
            <availability status="restricted">
              <licence target="https://about.hal.science/hal-authorisation-v1/">HAL Authorization<ref corresp="#file-245655-190072"/></licence>
            </availability>
          </publicationStmt>
          <seriesStmt>
            <idno type="stamp" n="AJP">Archive du Journal de Physique</idno>
          </seriesStmt>
          <notesStmt>
            <note type="audience" n="1">Not set</note>
            <note type="popular" n="0">No</note>
            <note type="peer" n="1">Yes</note>
          </notesStmt>
          <sourceDesc>
            <biblStruct>
              <analytic>
                <title xml:lang="en">Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics</title>
                <author role="aut">
                  <persName>
                    <forename type="first">A.</forename>
                    <surname>George</surname>
                  </persName>
                  <idno type="halauthorid">224910-0</idno>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">J.</forename>
                    <surname>Rabier</surname>
                  </persName>
                  <email type="md5">da06d16c699e266f9ccecb3437e320e6</email>
                  <email type="domain">univ-poitiers.fr</email>
                  <idno type="idhal" notation="numeric">877594</idno>
                  <idno type="halauthorid" notation="string">257474-877594</idno>
                  <idno type="ORCID">https://orcid.org/0000-0001-8218-981X</idno>
                </author>
              </analytic>
              <monogr>
                <idno type="halJournalId" status="VALID">20387</idno>
                <idno type="issn">0035-1687</idno>
                <idno type="eissn">2777-3671</idno>
                <title level="j">Revue de Physique Appliquée</title>
                <imprint>
                  <publisher>Société française de physique / EDP</publisher>
                  <biblScope unit="volume">22</biblScope>
                  <biblScope unit="issue">9</biblScope>
                  <biblScope unit="pp">941-966</biblScope>
                  <date type="datePub">1987</date>
                </imprint>
              </monogr>
              <idno type="doi">10.1051/rphysap:01987002209094100</idno>
            </biblStruct>
          </sourceDesc>
          <profileDesc>
            <langUsage>
              <language ident="en">English</language>
            </langUsage>
            <textClass>
              <keywords scheme="author">
                <term xml:lang="en">electronic levels</term>
                <term xml:lang="en">band gap</term>
                <term xml:lang="en">Peierls mechanism</term>
                <term xml:lang="en">dislocation glide</term>
                <term xml:lang="en">zinc blende structure</term>
                <term xml:lang="en">elemental semiconductors</term>
                <term xml:lang="en">plasticity</term>
                <term xml:lang="en">f.c.c. metals</term>
                <term xml:lang="en">III V semiconductors</term>
                <term xml:lang="en">dislocation dynamics</term>
                <term xml:lang="en">dislocation core structures</term>
                <term xml:lang="en">slip</term>
                <term xml:lang="en">dislocation structure</term>
              </keywords>
              <classCode scheme="halDomain" n="phys.hist">Physics [physics]/Physics archives</classCode>
              <classCode scheme="halTypology" n="ART">Journal articles</classCode>
              <classCode scheme="halOldTypology" n="ART">Journal articles</classCode>
              <classCode scheme="halTreeTypology" n="ART">Journal articles</classCode>
            </textClass>
            <abstract xml:lang="en">
              <p>Dislocation core structures in elemental semiconductors (ESC) and III-V compound semiconductors (CSC) with zinc blende structure are discussed in relation to their analogy with fcc metals. Emphasis is also put on the specific features of dislocations in SC at temperatures lower than 0,6 Tm when dislocation glide is controlled by the Peierls mechanism reflecting the strong covalent bonding of the atoms. Dislocation dynamics relevant to classical metallurgical effects or to specific effects associated with electronic levels introduced by dislocations in the band gap are reviewed. Analogies and differences between dislocation structures and properties in ESC and CSC are also discussed.</p>
            </abstract>
          </profileDesc>
        </biblFull>
      </listBibl>
    </body>
  </text>
</TEI>