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Article Dans Une Revue Journal de Physique Colloques Année : 1990

HREM CHARACTERIZATION OF STRUCTURAL CHANGES IN A DEFORMED Σ = 9 (122) GRAIN BOUNDARY IN SILICON

J. Putaux
J. Thibault-Dessaux
  • Fonction : Auteur

Résumé

At relatively high temperature (T>1020 K = 0.6 Tm), the deformation of a perfect Σ=9(122) symmetrical grain boundary (GB) induced large changes in the initial structure. The structural unit model was used to describe the structure of elementaryΣ=9 DSC dislocations cores, produced at low strain, and higher tilt angle coincidence GB's, produced at large strain . It was shown that the prediction of the GB structural evolution was not so straightforward and that the mixing of structural units depended on the deformation conditions.

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jpa-00230312 , version 1 (04-02-2008)

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J. Putaux, J. Thibault-Dessaux. HREM CHARACTERIZATION OF STRUCTURAL CHANGES IN A DEFORMED Σ = 9 (122) GRAIN BOUNDARY IN SILICON. Journal de Physique Colloques, 1990, 51 (C1), pp.C1-323-C1-328. ⟨10.1051/jphyscol:1990151⟩. ⟨jpa-00230312⟩

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