Article Dans Une Revue Journal de Physique Colloques Année : 1988

ELIMINATION OF TWINNING IN MOLECULAR BEAM EPITAXY OF GaAs/Si and GaAs/INSULATOR

C. Fontaine
  • Fonction : Auteur
J. Castagne
  • Fonction : Auteur
Eléna Bedel-Pereira
A. Muñoz-Yagüe
  • Fonction : Auteur

Résumé

We present a study of GaAs nucleation on Si and (Ca, Sr)F2(100) surfaces which shows that a 2D growth can be achieved for very thin (15 A°) deposits obtained at low temperature (25-100°C). Raising the temperature to 300-400°C leads to a stoichiometric and monocrystalline layer. Electron diffraction shows a diagram without twin spots and a surface devoid of noticeable roughness. The proposed procedure paves the way for the subsequent use of low temperature techniques aimed at the fabrication of co-integrated structures associating GaAs and Si.

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jpa-00227884 , version 1 (04-02-2008)

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C. Fontaine, J. Castagne, Eléna Bedel-Pereira, A. Muñoz-Yagüe. ELIMINATION OF TWINNING IN MOLECULAR BEAM EPITAXY OF GaAs/Si and GaAs/INSULATOR. Journal de Physique Colloques, 1988, 49 (C4), pp.C4-697-C4-700. ⟨10.1051/jphyscol:19884146⟩. ⟨jpa-00227884⟩

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