INTERACTION BETWEEN ARGON AND DOPANTS IN SPUTTERED a-Si : H
Résumé
The concentrations of As, B, H, Ar and Si in sputtered a-Si : H are measured by helium Rutherford backscattering and nuclear reactions analysis. Excess or deficit of hydrogen and argon by comparison with intrinsic a-Si : H are found in presence of dopants at high deposition rate. This is related to the plasma deposition method and would suggest micro grain structure in the deposited layer.
Domaines
Articles anciens| Origine | Accord explicite pour ce dépôt |
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