Article Dans Une Revue APL Electronic Devices Année : 2026

Effect of doping of the intermediate layer on the RF performances of GaN-based p-i-n diodes

Julien Ladroue

Résumé

In this article, we study the effect of the doping level in the intermediate layer of a pseudo-vertical GaN-based p-i-n diode. By decreasing the doping level, from 1.1 × 1016 to 1.6 × 1014 cm−3, we show that the OFF-state capacitance can be reduced by a factor 2.2, without affecting the ON-state resistance too much, which is increased by only 16%. The main consequence is an increase in the cutoff frequency by a factor 1.8, from 137 ± 5 to 250 ± 16 GHz. The DC characteristics of the diode are preserved since no significant variation of the turn on voltage has been found and no breakdown occurs for up to −200 V biasing.

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hal-05596640 , version 1 (20-04-2026)

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Kevin Nadaud, Zihao Lyu, Pedro F. P. P. Rocha, Daniel Alquier, Quentin Paoli, et al.. Effect of doping of the intermediate layer on the RF performances of GaN-based p-i-n diodes. APL Electronic Devices, 2026, 2 (2), pp.026107. ⟨10.1063/5.0319825⟩. ⟨hal-05596640⟩
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