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            <idno type="halRefHtml">&lt;i&gt;2025 International Conference on Microelectronics (ICM)&lt;/i&gt;, Dec 2025, Cairo, Egypt. pp.1-4, &lt;a target="_blank" href="https://dx.doi.org/10.1109/ICM66518.2025.11322524"&gt;&amp;#x27E8;10.1109/ICM66518.2025.11322524&amp;#x27E9;&lt;/a&gt;</idno>
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                <term xml:lang="en">embedded characterization</term>
                <term xml:lang="en">ring-oscillator</term>
                <term xml:lang="en">overlap capacitances</term>
                <term xml:lang="en">gate capacitance</term>
                <term xml:lang="en">MOS</term>
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              <p>Precise measurement of gate and gate-to drain/source overlap capacitances of MOS transistors is essential during technology development to assess process trial effects on MOS electrical parameters and monitor process variations. Measuring such low-value capacitances is challenging with external equipment due to additional parasitic capacitances. This work presents a fast and accurate oscillator based embedded capacitance measurement system targeting MOS transistor capacitances. The capacitance values are converted into easily measurable oscillation frequencies using ring oscillators. The system includes multiple selectable ring paths loaded with known-value capacitors for calibration. Once calibrated, it enables the evaluation of unknown capacitances. Simulation results in a 40 nm CMOS technology, including post layout simulations, confirm the feasibility and accuracy of the proposed approach.</p>
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