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              <p>This paper deals with SiC MOSFET preconditioning techniques with the aim of using Vth measurement as a reliable thermally sensitive electrical parameter (TSEP). In particular, the efficiency of the different preconditioning processes is studied for different stress voltages and temperatures applied to the MOSFET. The time constant of the trapping phenomenon is globally revealed by measurements of the Vth shift over time. This leads to choosing the preconditioning carefully.</p>
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