Multi-technique study of composition, structure, and bonding in PECVD amorphous silicon carbide films
Étude multitechnique de la composition, de la structure et de la liaison dans les films de carbure de silicium amorphes déposés par PECVD
Résumé
4H Silicon Carbide multichannel neural interface devices using NPN junctions for channel isolation were fabricated using four different doping structures. Two devices used thicker, lowerdoped epitaxial layers, one used thin, highly-doped implanted layers implanted into a N epilayer, and one used thin-highly-doped implanted layers into an N substrate. The devices were characterized in terms of resistance, charge delivery, leakage current through the substrate, and crosstalk between channels. The thickest, lower-doped epitaxial layers performed best, resulting in great isolation and good performance. While the implanted layers showed high charge delivery, their resistance is reduced due to the thin layers and the isolation is particularly poor.
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