Ammonia-MBE growth of ScAlN for high power/high frequency electronics
Résumé
In this work, the molecular beam epitaxy (MBE) with ammonia of ScAlN/GaN high electron mobility transistor heterostructures has been developed on sapphire and silicon substrates. The effect of growth temperature and ScAlN barrier thickness on 2-dimensional electron gas density has been investigated. A transistor with a maximum drain current superior to 1 A/mm has been fabricated on Silicon substrate despite the ohmic contacts present a resistance around 1 ohm.mm, and functional transistors with barriers as thin as 5 nm have been demonstrated.
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