Communication Dans Un Congrès Année : 2025

Ammonia-MBE growth of ScAlN for high power/high frequency electronics

Résumé

In this work, the molecular beam epitaxy (MBE) with ammonia of ScAlN/GaN high electron mobility transistor heterostructures has been developed on sapphire and silicon substrates. The effect of growth temperature and ScAlN barrier thickness on 2-dimensional electron gas density has been investigated. A transistor with a maximum drain current superior to 1 A/mm has been fabricated on Silicon substrate despite the ohmic contacts present a resistance around 1 ohm.mm, and functional transistors with barriers as thin as 5 nm have been demonstrated.

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Dates et versions

hal-05201862 , version 1 (06-08-2025)

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Yvon Cordier, Maxime Hugues, Caroline Elias, Sébastien Chenot, Florian Bartoli, et al.. Ammonia-MBE growth of ScAlN for high power/high frequency electronics. SPIE OPTO: Gallium Nitride Materials and Devices XX, SPIE, Jan 2025, San Francisco, CA, United States. pp.1336602, ⟨10.1117/12.3042852⟩. ⟨hal-05201862⟩
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