Alternative and low-cost technique to transfer III-V DHBT transistors onto Si-HR using Cu-Cu bonding for sub-THz power amplification for 6G
Résumé
This study introduces the preparation of a future transferred InP double heterojunction bipolar transistor (DHBT) on a high-resistivity silicon substrate. Our approach employs copper (Cu) as a thermal heat sink and chosen for its excellent thermal conductivity, which will make possible efficient heat dissipation in electronic devices. This ensures superior compatibility with industry standards and improves performance in high power applications and ultra-low-cost material bonding. The development includes the first instance of heatsink bonding using a Si-Fab copper layer, together with a method for removing InP substrate . This process involves also a mechanical thinning down to 10 µm, followed by etching with HCl. These advancements are expected to significantly improve power amplification performance at high frequency, paving the way for 6G-compatible CMOS integration.