Influence of Growth Temperature and Scandium Concentration on the Surface Oxidation of ScAlN Films Grown by Molecular Beam Epitaxy
Résumé
Recently, there has been a large interest in the ScAlN alloy, thanks to its various applications in high-frequency highpower, acoustoelectric, and ferroelectric devices. Nonetheless, these applications could be impaired by defects present in the ScAlN alloy, such as oxygen impurities, a very prevalent defect due to the high oxygen affinity of scandium. Recent trends in ScAlN growth such as lowering growth and increasing Sc content could have an effect in the appearance of these impurities. Considering this, we have studied the influence of growth temperature and Sc content in the surface oxide and oxygen content of ScAlN films grown by ammonia source molecular beam epitaxy and characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and angle resolved-X-ray photoelectron spectroscopy.
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