Dual-Comb generation in III-V semiconductor external cavity laser: Dual transverse modes versus degenerated cavities solutions
Résumé
We developed two passively mode-locked dual frequency-combs configurations based on III-V semiconductor VECSEL technology. Operating at a wavelength of 1.06 µm, both configurations achieve 1 GHz repetition rate with ultrashort pulse durations <5 ps. The first configuration is a dual Laguerre-Gaussian (LG) mode oscillator, designed to generate two distinct frequency combs on a single optical axis. The second configuration is a modeless self-imaging cavity, featuring two distinct optical axes in a telecentric configuration to enable coherent dual-comb operation.
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