Communication Dans Un Congrès Année : 2025

Nanostructuration and Interfacial Effects on the Properties of Ferroelectric HfZrO2 Thin Films

Résumé

Fluorite-structure ferroelectrics, such as (Hf,Zr)O2 (HZO) thin films, offer advantages over conventional perovskite-structure ferroelectrics and are studied for use in Ferroelectric Random Access Memories (FeRAM) [1]. Research aims to stabilize the ferroelectric phase (f-phase) and meet industrial requirements. While previous studies suggested that amorphous films crystallize into the f-phase during annealing, direct evidence was lacking.This study investigates HZO thin films deposited by RF magnetron sputtering. By varying sputtering chamber pressure, both amorphous and crystalline films were obtained at room temperature. Only amorphous films crystallized into the f-phase after rapid thermal annealing [2,3]. Two architectures, mesa (M) and non-mesa (NM), were then fabricated, consisting of Si/TiN/HfZrO2/TiN/Pt stacks. Electrical measurements using the PUND sequence revealed distinct behaviors between the samples [4]. Both architectures achieved high remanent polarization (Pr), comparable to atomic layer deposition samples. However, during cycling, NM-samples exhibited greater Pr increase but lower endurance, while M-samples performed better under low stress. These differences arose from micro-crystalline structures influenced by stress states during annealing. GIXRD analysis revealed monoclinic phases in NM-samples but not in M-samples, highlighting the role of TiN electrode coverage in shaping stress and crystallization patterns.Further investigation into electrode/HZO interfaces confirmed their significant impact on HZO ferroelectricity, especially in ultra-thin films [5]. Precise control over interface quality enabled enhanced ferroelectric properties, with double remanent polarization ~40 µC/cm². These findings mark progress toward high-performance, ultra-thin HZO films for applications like ferroelectric tunnel junctions in brain-inspired computing. References: [1] JPB Silva, et al., APL Materials, 2023, 11 (8); [2] J Bouaziz, et al., APL Materials, 2019, 7 (8); [3] R Cervasio, et al., ACS Applied Materials & Interfaces, 2024, 16 (3); [4] J Bouaziz, et al, ACS Applied Electronic Materials, 2019, 1 (9); [5] G Segantini, et al, Advanced Electronic Materials 2023, 9 (10)

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Dates et versions

hal-05158924 , version 1 (11-07-2025)

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  • HAL Id : hal-05158924 , version 1

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Greta Segantini, Benoît Manchon, Jordan Bouaziz, Grégoire Magagnin, Martine Le Berre, et al.. Nanostructuration and Interfacial Effects on the Properties of Ferroelectric HfZrO2 Thin Films. The 14th Joint Asian Meeting on Ferroelectrics and Electroceramics (AMF-AMEC-14) - ICMAT 2025, MRS-Singapore, Jun 2025, Singapour, Singapore. ⟨hal-05158924⟩
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