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                <term xml:lang="en">Silicon carbide</term>
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                <term xml:lang="en">sintering aid</term>
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              <p>Silicon carbide (SiC) is a material of choice for high-temperature, aerospace, nuclear, and wearresistant applications due to its exceptional mechanical strength, oxidation resistance, and chemical stability. However, full densification of SiC remains challenging because of its strong covalent bonding, which necessitates high sintering temperatures and the use of sintering additives. In this study, 3D-printed SiC parts using Nanoe® filaments were sintered at 2200 °C following debinding under either nitrogen atmosphere or vacuum. Dilatometry was employed to investigate the densification behavior. A significant variation in final density and sintering anisotropy was observed depending on the debinding conditions. The findings underscore the critical role of carbon additives in the intermediate and final stages of sintering, where they inhibit grain coarsening and enable the achievement of high densification. In this system, coarsening plays a dominant role and completely reverses the expected Master Sintering Curve (MSC) behavior when carbon content is insufficient and oxide phases are present. This study demonstrates that both a high heating rate (10 °C/min) and the presence of carbon (originating from the binder) are essential to achieve full densification in 3D-printed SiC specimens.</p>
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