Communication Dans Un Congrès Année : 2025

13 mW/μm² and 24 % PAE at 94 GHz for 0.44-μm Transferred InP/GaAsSb DHBT on Si

Résumé

We present large-signal load-pull measurements of a transferred InP/GaAsSb double heterojunction bipolar transistor fabricated on a high-resistivity silicon substrate. The tested devices feature an emitter area of 0.44 × 3.9 µm². When biased for highest power, an output power of 13.42 dBm was achieved corresponding to a power density of 12.92 mW/µm² (5.68 W/mm). A peak value of 23.7 % was obtained along with a power gain of 5.35 dB when the load impedance was optimized for maximum power-added efficiency (P.A.E). These results highlight the benefits of thermal dissipation improvement in overcoming self-heating effects to achieve high output power.

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Dates et versions

hal-05145160 , version 1 (04-07-2025)

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  • HAL Id : hal-05145160 , version 1

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Abdelmalek Zemour, Malek Zegaoui, Yannick Roelens, Etienne Okada, Pascal Chevalier, et al.. 13 mW/μm² and 24 % PAE at 94 GHz for 0.44-μm Transferred InP/GaAsSb DHBT on Si. 48th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 19th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2025, Cadix, Spain. ⟨hal-05145160⟩
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