13 mW/μm² and 24 % PAE at 94 GHz for 0.44-μm Transferred InP/GaAsSb DHBT on Si
Résumé
We present large-signal load-pull measurements of a transferred InP/GaAsSb double heterojunction bipolar transistor fabricated on a high-resistivity silicon substrate. The tested devices feature an emitter area of 0.44 × 3.9 µm². When biased for highest power, an output power of 13.42 dBm was achieved corresponding to a power density of 12.92 mW/µm² (5.68 W/mm). A peak value of 23.7 % was obtained along with a power gain of 5.35 dB when the load impedance was optimized for maximum power-added efficiency (P.A.E). These results highlight the benefits of thermal dissipation improvement in overcoming self-heating effects to achieve high output power.