Integration of rare earth-doped chalcogenides with silicon photonics for mid-IR emission
Résumé
This paper presents the development of a hybrid platform combining the outstanding mid-IR emission properties of rare earth-doped chalcogenides materials with the degrees of freedom and electro-optic functionalities offered by the Si photonics platform. Successful Dy 3+ -doped Ga5Ge20Sb10Se65 RF magnetron sputtering on Si strip and suspended Si subwavelength structures is first demonstrated. Broadband mid-IR emission up to 5 µm is then reported from these hybrid integrated chalcogenides-Si structures.