Communication Dans Un Congrès Année : 2025

Integration of rare earth-doped chalcogenides with silicon photonics for mid-IR emission

Résumé

This paper presents the development of a hybrid platform combining the outstanding mid-IR emission properties of rare earth-doped chalcogenides materials with the degrees of freedom and electro-optic functionalities offered by the Si photonics platform. Successful Dy 3+ -doped Ga5Ge20Sb10Se65 RF magnetron sputtering on Si strip and suspended Si subwavelength structures is first demonstrated. Broadband mid-IR emission up to 5 µm is then reported from these hybrid integrated chalcogenides-Si structures.

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Dates et versions

hal-05142050 , version 1 (03-07-2025)

Identifiants

  • HAL Id : hal-05142050 , version 1

Citer

Loïc Bodiou, Abdelali Hammouti, Taghrid Ghanawi, Sara Toxqui-Rodriguez, Jonathan Lemaitre, et al.. Integration of rare earth-doped chalcogenides with silicon photonics for mid-IR emission. European Conference on Integrated Optics, Cardiff University, Jun 2025, Cardiff (Wales), United Kingdom. ⟨hal-05142050⟩
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