Article Dans Une Revue (Article De Synthèse) Sensors Année : 2024

A 26–28 GHz, Two-Stage, Low-Noise Amplifier for Fifth-Generation Radio Frequency and Millimeter-Wave Applications

Résumé

This paper presents a high-gain low-noise amplifier (LNA) operating at the 5G mm-wave band. The full design combines two conventional cascode stages: common base (CB) and common emitter (CS). The design technique reduces the miller effect and uses low-voltage supply and low current-density transistors to simultaneously achieve high gain and low noise figures (NFs). The two-stage LNA topology is analyzed and designed using 0.25 µm SiGe BiCMOS process technology from NXPsemiconductors. The measured circuit shows a small signal gain at 26 GHz of 26 dB with a gain error below 1 dB on the entire frequency band (26–28 GHz). The measured average NF is 3.84 dB, demonstrated over the full frequency band under 15 mA current consumption per stage, supplied with a voltage of 3.3 V.

Dates et versions

hal-05137685 , version 1 (01-07-2025)

Identifiants

Citer

Philippe Descamps. A 26–28 GHz, Two-Stage, Low-Noise Amplifier for Fifth-Generation Radio Frequency and Millimeter-Wave Applications. Sensors, 2024, ⟨10.3390/s24072237⟩. ⟨hal-05137685⟩
30 Consultations
0 Téléchargements

Altmetric

Partager

  • More