Article Dans Une Revue Materials Science in Semiconductor Processing Année : 2025

New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations

Résumé

This article compares the impact of different freestanding GaN substrates on the material and electrical properties of Schottky diodes. Material characterization using cathodoluminescence and Raman spectroscopy was performed to analyze defects in the wafers. Randomly distributed clusters of dislocations were observed in one sample, whereas the other sample was free of such clusters. Schottky diodes were subsequently fabricated on these wafers and electrically characterized to investigate the influence of material characteristics on key device parameters, including barrier height, ideality factor, on-resistance, leakage current, and breakdown voltage. A lower barrier height, higher ideality factor, and lower breakdown voltage were observed in the sample with clusters.

Dates et versions

hal-05099324 , version 1 (05-06-2025)

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Citer

Vishwajeet Maurya, Daniel Alquier, Maroun Dagher, Camille Sonneville, Dominique Planson, et al.. New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations. Materials Science in Semiconductor Processing, 2025, 198, pp.109681. ⟨10.1016/j.mssp.2025.109681⟩. ⟨hal-05099324⟩
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