Article Dans Une Revue Advanced Materials Interfaces Année : 2025

Selective Transparent Contacts Based on a Hafnium‐Titanium Oxide Alloy with Optimized Band Alignment for c‐Si Solar Cells

Résumé

In this study, the potential of hafnium-titanium oxide (HfxTi1-xOy, HTO) thin films is explored and deposited by low-temperature (75 °C) atomic layer deposition (ALD) as selective contacts for crystalline silicon (c-Si) solar cells. Through a comprehensive analysis of their selectivity, optical and chemical properties, and band alignment characteristics, the HTO films are shown to exhibit remarkable electron selectivity. They formed efficient ohmic contacts on n-type silicon, while exhibiting diode-like characteristics on p-type silicon, confirming their selective behavior. Band alignment analysis at the HTO/n-Si interface revealed a high valence band offset and a low conduction band offset, facilitating efficient electron extraction and blocking hole transport. Optical measurements demonstrate the high optical transparency of the HTO films with a bandgap above 3.5 eV, making them suitable for photovoltaic applications. A proof-of-concept photovoltaic device is evaluated, and significant improvements are observed in all solar cell parameters following the incorporation of HTO, highlighting the potential of low-temperature ALD-deposited HTO films as efficient electron-selective contacts for next-generation c-Si solar cells.

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hal-05078472 , version 1 (22-05-2025)

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Charif Tamin, Céline Chevalier, Anil Kumar Bharwal, Claude Botella, Thomas Fix, et al.. Selective Transparent Contacts Based on a Hafnium‐Titanium Oxide Alloy with Optimized Band Alignment for c‐Si Solar Cells. Advanced Materials Interfaces, In press, ⟨10.1002/admi.202500083⟩. ⟨hal-05078472⟩
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