Electrical characterization of the backside interface on BSI global shutter pixels with Tungsten-shield test structures on CDTI process
Résumé
A new methodology is presented using well
known electrical characterization techniques on dedicated single
devices in order to investigate backside interface contribution to
the measured pixel dark current in BSI CMOS image sensors
technologies. Density of interface states and charges within the
oxide extractions are achieved. The results show that in our case,
the density of state is not directly the source of dark current
excursions. The quality of the passivation of the backside
interface appears to be the root cause. Thanks to the presented
new test structures, it has been demonstrated that backside
interface contribution to dark current can be investigated
separately from other contributions.
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