Communication Dans Un Congrès Année : 2019

Electrical characterization of the backside interface on BSI global shutter pixels with Tungsten-shield test structures on CDTI process

Résumé

A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image sensors technologies. Density of interface states and charges within the oxide extractions are achieved. The results show that in our case, the density of state is not directly the source of dark current excursions. The quality of the passivation of the backside interface appears to be the root cause. Thanks to the presented new test structures, it has been demonstrated that backside interface contribution to dark current can be investigated separately from other contributions.


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hal-05076413 , version 1 (21-05-2025)

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  • HAL Id : hal-05076413 , version 1

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Célestin Doyen, Stéphane Ricq, Pierre Magnan, Olivier Marcelot, Marios Barlas, et al.. Electrical characterization of the backside interface on BSI global shutter pixels with Tungsten-shield test structures on CDTI process. International Image Sensor Workshop 2019, Jun 2019, Snowbird, Utah, United States. ⟨hal-05076413⟩

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