Article Dans Une Revue Physical Review Applied Année : 2025

Spin-dependent photovoltage in graphene/MoS2-based field-effect transistors

Khalid Dinar
Cédric Bray
Sergey Krishtopenko
Laurent Bonnet
Matthieu Paillet
Jérémie Torres
Igor Rozhansky
Benoit Jouault
Sébastien Nanot
Frédéric Teppe

Résumé

It has recently been shown that Terahertz sensors can effectively detect the spin resonances of Dirac fermions in graphene. The associated photovoltaic measurement technique allows for the investigation of the intrinsic spin-orbit coupling in graphene as well as its topological properties from microwave to Terahertz frequencies. In this work, using graphene/MoS2-based Field-Effect Transistors, we observed a magnetic resonance photovoltage signal in the Gigahertz range that is independent on the gate bias. The dispersion of the associated spin-flip transitions remains intriguingly unaffected by the MoS2 layer. In parallel, the spin-related signal consistently appears as a drop in photovoltage, regardless of the signal's polarity or origin, whether it is due to plasma wave rectification or thermoelectric effects. This behavior is interpreted as a decrease in the system's spin polarization due to spin-dependent recombination or scattering of photocarriers. Understanding the various photovoltaic signals in highly sensitive Gigahertz/Terahertz sensors paves the way for exploring spin-dependent mechanisms in two-dimensional quantum materials, influenced by proximity effects such as spin-orbit coupling, topology, and magnetism.

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Dates et versions

hal-05069730 , version 1 (15-05-2025)

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Khalid Dinar, Juan Antonio Delgado-Notario, Cédric Bray, Kenneth Maussang, Elsa Perez-Martin, et al.. Spin-dependent photovoltage in graphene/MoS2-based field-effect transistors. Physical Review Applied, 2025, 23 (4), pp.044043. ⟨10.1103/PhysRevApplied.23.044043⟩. ⟨hal-05069730⟩
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