Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2025

Physics-Based Ion Track Structure Model for Single-Event Effect Simulations on Power Devices

Manami Iwata
Satoshi Kuboyama
Alain Michez
  • Fonction : Auteur
Akiko Makihara
  • Fonction : Auteur
Misa Takahashi
Norio Nemoto
  • Fonction : Auteur
Masahiko Midorikawa
  • Fonction : Auteur
Takahiro Makino
Takeshi Ohshima
Hiroyuki Shindou
  • Fonction : Auteur

Résumé

A physics-based ion track structure was successfully established for ions covering a wide LET range applicable to single-event effect simulations on power devices by modeling the power law profile, which was derived from Geant4 simulation with MicroElec extension. The collected charge in two different types of SiC diodes calculated by the device simulator ECORCE is in good agreement with the experimental results at the low bias condition.

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Dates et versions

hal-05048888 , version 1 (28-04-2025)

Identifiants

Citer

Manami Iwata, Satoshi Kuboyama, Alain Michez, Akiko Makihara, Misa Takahashi, et al.. Physics-Based Ion Track Structure Model for Single-Event Effect Simulations on Power Devices. IEEE Transactions on Nuclear Science, 2025, pp.1-1. ⟨10.1109/TNS.2025.3564242⟩. ⟨hal-05048888⟩
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