Physics-Based Ion Track Structure Model for Single-Event Effect Simulations on Power Devices
Résumé
A physics-based ion track structure was successfully established for ions covering a wide LET range applicable to single-event effect simulations on power devices by modeling the power law profile, which was derived from Geant4 simulation with MicroElec extension. The collected charge in two different types of SiC diodes calculated by the device simulator ECORCE is in good agreement with the experimental results at the low bias condition.