Communication Dans Un Congrès Année : 2024

GFET Dynamic Performance at 77 K and Circuit Design Proposals Suitable for Low-Temperature Microwave Applications

Résumé

This work presents a small-signal model of a top-gate graphene field-effect transistor working in a 77 K environment. The proposed model is able to describe the experimental high-frequency operation of the device up to tens of GHz. The experimentally-calibrated small-signal GFET model has been used to design single- and double-stage amplifiers at 2.15 GHz, 2.2 GHz and 2.4 GHz with high-gain and high-selectivity. A discussion is provided regarding the feasibility of using such circuits as a second stage in microwave applications based on Josephson Junctions working at the same cryogenic temperature as the designs proposed here.

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Dates et versions

hal-05039796 , version 1 (18-04-2025)

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Leslie Valdez-Sandoval, Eloy Ramírez-García, Nikolaos Mavredakis, Sylvie Lepilliet, David Jiménez, et al.. GFET Dynamic Performance at 77 K and Circuit Design Proposals Suitable for Low-Temperature Microwave Applications. 2024 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2024, Salt Lake City, United States. pp.92-96, ⟨10.1109/NMDC58214.2024.10893955⟩. ⟨hal-05039796⟩
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