GFET Dynamic Performance at 77 K and Circuit Design Proposals Suitable for Low-Temperature Microwave Applications
Résumé
This work presents a small-signal model of a top-gate graphene field-effect transistor working in a 77 K environment. The proposed model is able to describe the experimental high-frequency operation of the device up to tens of GHz. The experimentally-calibrated small-signal GFET model has been used to design single- and double-stage amplifiers at 2.15 GHz, 2.2 GHz and 2.4 GHz with high-gain and high-selectivity. A discussion is provided regarding the feasibility of using such circuits as a second stage in microwave applications based on Josephson Junctions working at the same cryogenic temperature as the designs proposed here.