Brevet Année : 2001

MOSFET transistor with short channel effect compensated by the gate material

Caroline Hernandez
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Dates et versions

hal-05024943 , version 1 (08-04-2025)

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  • HAL Id : hal-05024943 , version 1

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Caroline Hernandez, Jerome Alieu, Michel Haond. MOSFET transistor with short channel effect compensated by the gate material. France, Patent n° : FR2795868 (A1), US6528399 (B1). 2001, https://worldwide.espacenet.com/publicationDetails/biblio?CC=FR&DB=fr.espacenet.com&FT=D&KC=A1&NR=2795868A1&date=20010105&locale=fr_EP. ⟨hal-05024943⟩
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