Communication Dans Un Congrès Année : 2019

Cavity based THz photoconductive switch: towards high average power

Jacques Hawecker
  • Fonction : Auteur
K. Maussang
Juliette Mangeney
Jérôme Tignon
Sukhdeep Dhillon

Résumé

Reaching milliwatt average powers and room temperature operation for THz sources has become the key challenge for the uptake of THz applications that require real-time imaging. This criteria remains extremely challenging. By placing a photoconductive switch within a quasi-resonant cavity, we are able to show average power around 2mW which is an important development towards room temperature THz imaging.

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Dates et versions

hal-05013401 , version 1 (31-03-2025)

Identifiants

Citer

Jacques Hawecker, K. Maussang, José Palomo, R. Colombelli, I. Sagnes, et al.. Cavity based THz photoconductive switch: towards high average power. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-1, ⟨10.1109/IRMMW-THz.2019.8873779⟩. ⟨hal-05013401⟩
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