Article Dans Une Revue Applied Physics Express Année : 2025

ScAlN/GaN-on-Si (111) HEMTs for RF applications

Seif El Whibi
Yassine Fouzi

Résumé

ScAlN is a promising barrier material for next generation RF high electron mobility transistors, outperforming AlGaN thanks a higher 2-dimensional electron gas (2DEG) density and a thinner barrier with a lower lattice mismatch with GaN. A sub-10 nm barrier ScAlN/GaN heterostructure, grown by ammonia-source molecular beam epitaxy on Si(111), is processed into transistors. The 2DEG density is 1.6x1013/cm² with a mobility μ ∼ 621 cm²V-1s-1. A 75-nm gate length transistor exhibits a drain current density of 1.35 A/mm, a transconductance of ~284 mS/mm, a current gain cutoff frequency of 82 GHz and a maximum oscillation frequency of 112 GHz.

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hal-05008937 , version 1 (11-04-2025)

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Seif El Whibi, Nagesh Bhat, Yassine Fouzi, Nicolas Defrance, Jean-Claude de Jaeger, et al.. ScAlN/GaN-on-Si (111) HEMTs for RF applications. Applied Physics Express, 2025, 18 (4), pp.046501. ⟨10.35848/1882-0786/adc5db⟩. ⟨hal-05008937⟩
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