Poster De Conférence Année : 2025

Secondary ion mass spectrometry (SIMS) analysis of (113) PIN & NIP diamond structures

Résumé

With tremendous physical properties, diamond is considered to be the ultimate semiconductor for high power electronics. Indeed, diamond is awaited to endure high electric fields with low leakage current. It is then a candidate of choice for high voltage and high temperature power electronics. Even if some incursions were made on the (110) orientation, the conventional crystalline orientations used for diamond are (111) and (100). Lying in between, (113) is a stable growth orientation during chemical vapor deposition and could allow obtaining enlarged crystals. For p-type doping with boron, the LSPM lab has proven the interest of the (113) orientation by growing p-type free-standing plates with equivalent quality to (100) orientation and, very recently, enlarged (113) p+-substrates [1]. For n-type doping with phosphorus, the GEMaC lab has shown that the (113) orientation give access to lower compensation ratio than (100) with higher electron mobility [2] at temperature above 450°C. All those results pave the way for the realization (113) diamond bipolar devices. In the framework of the ANR-LAPIN113 project [3], the LAAS lab, specialized in power devices simulation and fabrication, has defined the “ideal” PIN and NIP stacks that might ensure the target breakdown voltage. LSPM and GEMaC labs were then in charge of the synthesis to get requested PIN and NIP structures. Thanks to secondary ion mass spectrometry (SIMS), we analysed the depth-distributions of dopants over each structure. The depth profiles reveal the ability of the grower labs to achieve requested PIN and NIP structures on (113) orientation. The knowledge of the exact doping profiles will allow to simulate diode characteristics and help to understand the future experimental measurements of the diodes that will be performed on the PIN and NIP structures. References 1. R. Mesples-Carrère, R. Issaoui, A. Valentin, L. Banaigs, O. Brinza, F. Bénédic, J. achard. Diamond Relat. Mater. 149 (2024), 111659. https://doi.org/10.1016/j.diamond.2024.111659 2. M.-A. Pinault-Thaury, I. Stenger, R. Gillet, S. Temgoua, E. Chikoidze, Y. Dumont, F. Jomard, T. Kociniewski, J. Barjon. Carbon 175 (2021) 254. https://doi.org/10.1016/j.carbon.2021.01.011 3. For information about the ANR-LAPIN113 project see https://anr.fr/Projet-ANR-20-CE05-0032

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hal-05008782 , version 1 (27-03-2025)

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  • HAL Id : hal-05008782 , version 1

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Rémi Gillet, Rémi Mesples-Carrère, François Jomard, Ingrid Stenger, Christophe Arnold, et al.. Secondary ion mass spectrometry (SIMS) analysis of (113) PIN & NIP diamond structures. Hasselt Diamond Workshop 2025 SBDD XXIX, Mar 2025, Hässelt, Belgium. ⟨hal-05008782⟩
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