Communication Dans Un Congrès Année : 2004

Impact of few electron phenomena on floating-gate memory reliability

Fichier non déposé

Dates et versions

hal-05006712 , version 1 (26-03-2025)

Identifiants

Citer

G. Molas, Damien Deleruyelle, B. De Salvo, G. Ghibaudo, M. Gely, et al.. Impact of few electron phenomena on floating-gate memory reliability. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., Mar 2004, San Francisco, France. pp.877-880, ⟨10.1109/IEDM.2004.1419320⟩. ⟨hal-05006712⟩
28 Consultations
0 Téléchargements

Altmetric

Partager

  • More