Article Dans Une Revue Solid-State Electronics Année : 2021

Deep insights on new embedded resistance and gated diode on thin film silicon BIMOS device with and without external polysilicon resistance for advanced ESD protection in FD-SOI technology

Fichier non déposé

Dates et versions

hal-04957170 , version 1 (19-02-2025)

Identifiants

Citer

Ph. Galy, Lorena Anghel. Deep insights on new embedded resistance and gated diode on thin film silicon BIMOS device with and without external polysilicon resistance for advanced ESD protection in FD-SOI technology. Solid-State Electronics, 2021, 185, pp.108092. ⟨10.1016/j.sse.2021.108092⟩. ⟨hal-04957170⟩
33 Consultations
0 Téléchargements

Altmetric

Partager

  • More