Article Dans Une Revue Synthetic Metals Année : 1991

(TMTSF)3Ta2F11: Synthesis, structural chemistry, electronic structure and physical properties

Résumé

The title compound contains the discrete, monovalent anion Ta2F11 - as evidenced by resolution of the crystal structure: triclinic P1, a=7.798(2), b=10.976(4), c=13.557(4) A ̊ α=90.71(3), ß=99.47(2), γ=102.37(3) °, V=1116.5 A ̊3, Z=1, R=0.059, Rω=0.070, esd=1.850 based on 1851 reflexions and 250 parameters. The stack is strongly trimerized and short inter-stacks contacts confer a significant 2D character to the material as substaintiated by EHT-type tight-binding band structure calculations. This material is metallic at ambient pressure and displays charge localization below T=220K. The conductivity is increasing under pressure and the location of the resistivity minimum is shifted to temperatures higher than room temperature at P=11kbar. This suggests that charge localization is increased under pressure possibly due to an enhancement of the trimerization. This situation is contrasting sharply with the usual behaviour of the (TMTSF-TMTSF)2X family.

Dates et versions

hal-04944382 , version 1 (13-02-2025)

Identifiants

Citer

C. Lenoir, K. Boubekeur, P. Batail, E. Canadell, P. Auban, et al.. (TMTSF)3Ta2F11: Synthesis, structural chemistry, electronic structure and physical properties. Synthetic Metals, 1991, 42 (1-2), pp.1939-1942. ⟨10.1016/0379-6779(91)91986-K⟩. ⟨hal-04944382⟩
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