Article Dans Une Revue Solid State Communications Année : 1978

Electrical conductivity in HMTSF-TNAP under pressure

B. Mogensen
  • Fonction : Auteur
R.H. Friend
  • Fonction : Auteur
D. Jérome
K. Bechgaard
  • Fonction : Auteur
K. Carneiro
  • Fonction : Auteur

Résumé

The resistivity of the organic conductor HMTSF-TNAP has been measured at pressures up to 25 kbar and at temperatures down to 1.2 K. Under pressure the increase in the stacking axis resistivity of HMTSF-TNAP (Δ2,2 -Bi(4,5-trimethylene-1,3-diselenole)-11,11′,12,12′-tetracyano-2m6- naphtoquinodimethane) below 47 K is reduced, although the transition temperature Tp falls at only 0.7 K kbar-1. This weak pressure dependence compared to that of HMTSF-TCNQ correlates with the larger resistivity anisotropy in the TNAP salt.

Dates et versions

hal-04944305 , version 1 (13-02-2025)

Identifiants

Citer

B. Mogensen, R.H. Friend, D. Jérome, K. Bechgaard, K. Carneiro. Electrical conductivity in HMTSF-TNAP under pressure. Solid State Communications, 1978, 26 (12), pp.919-923. ⟨10.1016/0038-1098(78)91252-8⟩. ⟨hal-04944305⟩
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