Article Dans Une Revue Nano Trends Année : 2025

Swift heavy ion irradiation puts InGaN/GaN multi-quantum wells on the track for efficient green light emission

Résumé

InN and InGaN/GaN multi-quantum wells (MQWs) were subjected to Swift Heavy Ion (SHI) irradiation. Ion track formation was studied using transmission electron microscopy in both plane view and cross-sectional modes. InN shows a remarkable sensitivity towards track formation with a material decomposition experimentally evidenced by means of Electron Energy Loss Spectroscopy. The MQWs material shows higher stability with negligible GaN/InGaN interface intermixing along the SHI tracks. This intermixing, proposed for mitigating polarization effects in InGaN/GaN-based light emitting diodes (LED), was achieved by track-free SHI irradiation. This was combined with low temperature thermal treatment at 450 °C with the aim to both create a compositional gradient at the MQWs interfaces and preserving the material luminescence. The obtained results pave the way for the use of SHI irradiation for efficient green light emission of InGaN/GaN-based LED.

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hal-04922995 , version 1 (23-01-2026)

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M. Sall, G. Sow, A. Baillard, A. Dujarrier, L. Goodwin, et al.. Swift heavy ion irradiation puts InGaN/GaN multi-quantum wells on the track for efficient green light emission. Nano Trends, 2025, 9, pp.100078. ⟨10.1016/j.nwnano.2025.100078⟩. ⟨hal-04922995⟩
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