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            <title xml:lang="en">Exchange induced band splitting in wide-gap semimagnetic semiconductors in external field : Second order correction</title>
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                <forename type="first">A.K.</forename>
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              <date type="whenProduced">1988</date>
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            <idno type="stamp" n="UNIV-PSUD">Université Paris Sud - Paris XI</idno>
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                <title xml:lang="en">Exchange induced band splitting in wide-gap semimagnetic semiconductors in external field : Second order correction</title>
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                <term xml:lang="en">MAGNETIC SEMICONDUCTORS</term>
                <term xml:lang="en">SEMIMAGNETIC SEMICONDUCTORS</term>
                <term xml:lang="en">EXTERNAL FIELD</term>
                <term xml:lang="en">EXCHANGE HAMILTONIAN</term>
                <term xml:lang="en">CONDUCTION AND VALENCE BAND</term>
                <term xml:lang="en">BAND SPLITTING</term>
                <term xml:lang="en">ZINC COMPOUNDS</term>
                <term xml:lang="en">CADMIUM COMPOUNDS</term>
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              <p>The well known proportionality of the conduction and valence band splittings to magnetization is based on a first-order perturbation treatment of the e-Mn exchange Hamiltonian. We have studied the energy shift of each subband in the second order of perturbation. This leads to a substantial decrease of the band splitting obtained in the first order. Within a simple model, the correction is found to increase with the Mn concentration and the ratio of the exchange parameter to the band width. Our results can account for the anomalously large apparent decrease of the exchange parameters, reported in Zn1-xMnxTe and Cd1-xMnxTe at high x values.</p>
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