Inductively coupled plasmas (ICPs) containing Cl2 are widely used for plasma etching in the semiconductor industry. One common issue during plasma etching is aspect ratio dependent etching (ARDE), which is generally attributed to variation in the flux of etchant species to the bottom of features with different dimensions. Insufficient fluxes of neutral etchants to the bottom of high aspect ratio features can also result in sputtering, which tends to distort the feature profile. This article addresses two issues relevant to Cl2 ICP and plasma etching in these plasmas. First, a comprehensive set of diagnostics is used to validate a model for Cl2 ICP for gas pressure between 3 and 90 mTorr. The plasma diagnostics include microwave resonant hairpin probe-based measurements of electron density, photolysis-calibrated two-photon laser induced fluorescence measurement of Cl density, photo-detachment-based measurement of Cl− density, and laser diode absorption spectroscopy of argon metastable species to measure the gas temperature. Consistent with the experiments, the model shows that the electron density peaks near the center of the chamber at low gas pressure due to rapid diffusion. The electron density peak moves under the coils at higher pressures. Using the validated Cl2 model, we investigate ICPs with rectangular pulsed DC voltage for bias. It is shown that the Cl flux at the bottom of a trench decreases significantly with increasing aspect ratio of the trench. Neutral to ion flux ratio is therefore low at the bottom of higher aspect ratio trenches. The duty cycle of the pulsed bias waveform is found to be an effective means of increasing the neutral to energetic ion flux ratio, which should help with ARDE and sputter reduction.