Article Dans Une Revue Applied Physics Letters Année : 2005

Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor

Résumé

In this article, we present the room-temperature current-voltage characteristics of a nanometer scale (100×100nm2) metal-oxide-semiconductor capacitor containing few (less than 100) silicon nanoparticles. The layer of silicon nanoparticles is synthesized within the oxide of this capacitor by ultra low-energy ion implantation and annealing. Current fluctuations in the form of discrete current steps and sharp peaks appeared in the static and dynamic I(V) characteristics of the capacitor. These features have been associated to quantized charging and discharging of the nanoparticles and the resulting Coulomb interaction to the tunneling current.

Dates et versions

hal-04811986 , version 1 (29-11-2024)

Identifiants

Citer

M. Shalchian, Jérémie Grisolia, Gérard Benassayag, H. Coffin, S. Atarodi, et al.. Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor. Applied Physics Letters, 2005, 86 (16), ⟨10.1063/1.1906329⟩. ⟨hal-04811986⟩
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