Poster De Conférence Année : 2021

Metal-Insulator transition in annealed MoS 2 devices

Résumé

We measured the 4-probe conductance of more than 10 MoS 2 -based field effect transistors after in-situ annealing at 600K. Temperature dependent insulating and metallic behaviours have been observed as a function of carrier density. We do a careful analysis of thermally activated transport and variable range hopping of in-gap states, extracting the correct carrier density and mobility for the band conduction which compares well with theoretical expectations.

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Dates et versions

hal-04793994 , version 1 (20-11-2024)

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  • HAL Id : hal-04793994 , version 1

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Ivanovitch Castillo Arvelo, Thibault Sohier, Julien Chaste, Matthieu Verstraete, Abdelkarim Ouerghi, et al.. Metal-Insulator transition in annealed MoS 2 devices. Graphene 2021, Oct 2021, Grenoble, France. ⟨hal-04793994⟩
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