Temperature Compensation in FD-SOI Transistors: A Novel Approach with 27% Performance Improvement via Parasitic Diode Biasing - Archive ouverte HAL
Proceedings/Recueil Des Communications Année : 2024

Temperature Compensation in FD-SOI Transistors: A Novel Approach with 27% Performance Improvement via Parasitic Diode Biasing

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Sciences de l'ingénieur [physics]

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https://hal.science/hal-04790652

Soumis le : mardi 19 novembre 2024-12:13:56

Dernière modification le : mercredi 20 novembre 2024-03:16:40

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hal-04790652 , version 1 (19-11-2024)

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  • HAL Id : hal-04790652 , version 1

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Maxime Guillot, Yann Deval, Herve Lapuyade, Francois Rivet. Temperature Compensation in FD-SOI Transistors: A Novel Approach with 27% Performance Improvement via Parasitic Diode Biasing. 31st IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2024. ⟨hal-04790652⟩

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