Ga-atoms dynamic in an Ar/N2 magnetron sputtering discharge for GaN deposition is explored employing plasma diagnostic techniques such as optical emission spectroscopy and microwave interferometry. Through the assessment of gas temperature, electron temperature and density measured from the abovementioned diagnostics, we estimated both the flux and average energy of Ga-atoms impinging on the substrate. Emphasizing the working pressure as a pivotal factor, this study uncovers a correlation between the Ga-atoms flux, their average energy, and the growth rate and crystallinity of the GaN films extracted from ex-situ characterizations. Notably, the pressure value (6.6 Pa) at which both the growth rate and crystalline fraction are the greatest is also the condition at which both the flux and energy of Ga-atoms impinging on the target are maximal. The findings pave the way for improving the understanding and control of the complex interplay between plasma conditions and resulting film properties in the sputtering process.