Article Dans Une Revue Advanced Electronic Materials Année : 2023

High‐Speed Optoelectronic Graphene Sampler at 1.55 µm Reaching Intrinsic Performances

Marin Tharrault
P. Berger
S. Combrie
G. Baili
G. Baili
G. Baili
B Plaçais
Kenji Watanabe
E. Baudin

Résumé

Optoelectronic sampling is the ultimate method to perform ultra-high frequency analog-to-digital conversion. Thanks to the ps photo-thermo-bolometric effect in high mobility hexagonal boron nitride (h-BN) encapsulated graphene, a state-of-the-art optoelectronic sampler over a 40 GHz bandwidth using a 4 ps pulsed laser is demonstrated. The superior transport and optoelectronic linearities of this graphene sampler lead to very high harmonic rejections below -43 dB above 20 GHz. With a physics-based microscopic model, it is shown that harmonics are generated by optoelectronics saturation effects and only appear when carrier energy reaches that of optical phonons, which is very high in h-BN encapsulated graphene. This device is the first ultra-fast optoelectronic sampler based on the bolometric effect.

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hal-04785951 , version 1 (15-11-2024)

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Marin Tharrault, E. Grimaldi, Delphine Pommier, L. Hamidouche, P. Berger, et al.. High‐Speed Optoelectronic Graphene Sampler at 1.55 µm Reaching Intrinsic Performances. Advanced Electronic Materials, 2023, 9 (10), pp.2300260. ⟨10.1002/aelm.202300260⟩. ⟨hal-04785951⟩
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