High‐Speed Optoelectronic Graphene Sampler at 1.55 µm Reaching Intrinsic Performances
Résumé
Optoelectronic sampling is the ultimate method to perform ultra-high frequency analog-to-digital conversion. Thanks to the ps photo-thermo-bolometric effect in high mobility hexagonal boron nitride (h-BN) encapsulated graphene, a state-of-the-art optoelectronic sampler over a 40 GHz bandwidth using a 4 ps pulsed laser is demonstrated. The superior transport and optoelectronic linearities of this graphene sampler lead to very high harmonic rejections below -43 dB above 20 GHz. With a physics-based microscopic model, it is shown that harmonics are generated by optoelectronics saturation effects and only appear when carrier energy reaches that of optical phonons, which is very high in h-BN encapsulated graphene. This device is the first ultra-fast optoelectronic sampler based on the bolometric effect.
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