Low-pressure plasmas, in particular magnetron sputtering discharges, are increasingly used for the deposition of wideband gap semiconductor nitrides films (e.g., GaN or AlN) considering many benefits they exhibit with respect to conventional chemical vapor deposition techniques. Plasma-based solutions enable the dissociation of N2 molecules into N-atoms under conditions that would not be possible with the thermal process. However, as the dissociation rate remains quite small due to the strong nitrogen triple bond, it is somewhat complicated to determine and correlate the N-atoms density in the gas phase with that of the grown film in low-pressure discharges. Therefore, ns-two-photon absorption laser induced fluorescence (TALIF) has been carried out to determine the absolute density of N-atoms as a function of the pressure (tens of Pa range) in a radio-frequency sputtering plasma reactor used for GaN deposition. The TALIF set-up has been optimized using a monochromator and adequate signal processing to enhance the detection limit, enabling the measurement of N-atoms density as low as 1011 cm−3 at 15 Pa. These measurements have been completed with electron density measurements performed in the same pressure range using microwave interferometry, thus providing quantitative data on both electron and N-atom densities that can be used for fundamental understanding, process optimization, and modeling of magnetron discharge intended for nitride semiconductor deposition.