Impact of GaN Cap Layer and Carbon-Doped Buffer Layer on Thermal Resistance of HEMTs GaN
Résumé
This paper investigates the influence of carbon doping GaN buffer and the addition of a GaN cap layer on the thermal properties of gallium nitride high electron mobility transistors (GaN HEMTs). These devices are renowned for their excellent electrical characteristics, such as high operating frequency and high breakdown voltage. Recent developments, including carbon doping of the GaN buffer and integration of a GaN cap layer, aim to improve the crystalline quality, the charge carrier mobility and reduce the conduction losses. Thermal analysis using the thermoreflectance technique was carried out to assess the impact of these modifications on the thermal resistance of the transistors. Four different samples were fabricated and studied, with various combinations of doping and capping layers.
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