GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
Résumé
GaN-on-sapphire Schottky barrier diodes (SBDs) have been fabricated for frequency multiplier applications. A complete set of characterization has been done, including DC and RF measurements. A model to extract the Schottky parameters from S-parameters measurements in small diodes is proposed, obtaining good capacitance agreement compared with that extracted from capacitance-voltage (C-V) measurements carried out in large-area diodes where the parasitic effects are not significant.