Investigation of the origin of deep levels in Carbon-doped AlN/GaN/AlGaN HEMTs
Résumé
In this work, we focused on understanding the origin and impact of deep levels in various AlN/GaN HEMTs with carbon doped GaN buffer including or not an AlGaN back barrier. It is shown that the inclusion of a back barrier reduces drastically the current collapse. Furthermore, we examined the effect of carbon doping within the back barrier by comparing deep level signatures obtained from three variants. We show that a high concentration of carbon in the AlGaN back barrier screens the impact of carbon doping in the GaN buffer to a certain extent.
Domaines
Sciences de l'ingénieur [physics]
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Abstract_Lyes_Ben hammou_Farid medjdoub et al_WE2024.pdf (681.55 Ko)
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