Impact of Carbon-doped AlGaN back barrier in AlN/GaN/AlGaN HEMTs
Résumé
The impact of carbon doping into the AlGaN back barrier in AlN/GaN HEMTs is investigated. In this work, we demonstrate that a back polarization itself is not enough to ensure a proper electron confinement under high field, especially when using sub-150 nm. Experimental results are supported by TCAD showing that a doping compensation needs to be combined with the back barrier to allow for superior drain bias operation in the millimeter-wave range.
Domaines
Sciences de l'ingénieur [physics]| Origine | Accord explicite pour ce dépôt |
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