Van der Waals semiconductor InSe plastifies by martensitic transformation - Archive ouverte HAL
Journal Articles Science Advances Year : 2024

Van der Waals semiconductor InSe plastifies by martensitic transformation

Yandong Sun
Yupeng Ma
Jin-Yu Zhang
Tian-Ran Wei
Xun Shi
Ben Xu

Abstract

Inorganic semiconductor materials are crucial for modern technologies, but their brittleness and limited processability hinder the development of flexible, wearable, and miniaturized electronics. The recent discovery of room-temperature plasticity in some inorganic semiconductors offers a promising solution, but the deformation mechanisms remain controversial. Here, we investigate the deformation of indium selenide, a two-dimensional van der Waals semiconductor with substantial plasticity. By developing a machine-learned deep potential, we perform atomistic simulations that capture the deformation features of hexagonal indium selenide upon out-of-plane compression. Unexpectedly, we find that indium selenide plastifies through a martensitic transformation; that is, the layered hexagonal structure is converted to a tetragonal lattice with specific orientation relationship. This observation is corroborated by high-resolution experimental observations and theory. It suggests a change of paradigm, where the design of new plastically deformable inorganic semiconductors can focus on compositions and structures that facilitate phase transformations, going beyond the conventional dislocation slip.

Dates and versions

hal-04755752 , version 1 (28-10-2024)

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Yandong Sun, Yupeng Ma, Jin-Yu Zhang, Tian-Ran Wei, Xun Shi, et al.. Van der Waals semiconductor InSe plastifies by martensitic transformation. Science Advances , 2024, 10 (42), ⟨10.1126/sciadv.ado9593⟩. ⟨hal-04755752⟩
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